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never stop thinking. hys25[l/s]256160a[f/c]?7.5 hyb25s256160ac hye25l256160af 256mbit mobile-ram mobile-ram commercial temperature range extended temperature range internet data sheet, rev. 1.40, may 2005 memory products
the information in this document is subject to change without notice. edition 2005-05 published by infineon technologies ag, st.-martin-strasse 53, 81669 mnchen, germany ? infineon technologies ag 2006. all rights reserved. attention please! the information herein is given to describe certain co mponents and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. information for further information on technology , delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain da ngerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safe ty or effectiveness of that device or system. life support devices or systems are intended to be implanted in the hu man body, or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
never stop thinking. hys25[l/s]256160a[f/c]?7.5 hyb25s256160ac hye25l256160af 256mbit mobile-ram mobile-ram commercial temperature range extended temperature range internet data sheet, rev. 1.40, may 2005 memory products
template: mp_a4_v2.3_2004-01-14.fm hys25[l/s]256160a[f/c]?7.5 hyb25s2561 60ac hye25l256160af hye25l256160af revision history: rev. 1.40 2005-05 previous revision: rev. 1.3 2004-04 all added hyb25s256160ac all adapted internet edition previous revision: rev. 1.2 2004-04 page subjects (major changes since last revision) all added new product type we listen to your comments any information within this do cument that you feel is wro ng, unclear or missing at all? your feedback will help us to continuous ly improve the qualit y of this document. please send your proposal (including a reference to this document) to: techdoc.mp@infineon.com
hys25[l/s]256160a[f/c]?7.5 256mbit mobile-ram table of contents page internet data sheet 5 rev. 1.40, 2005-05 03292006-m7en-viaq 1 overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1.1 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1.2 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 3.1 mode register definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 3.1.1 operating mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 3.2 extended mode register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.1 operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.2 current specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
internet data sheet 6 rev. 1.40, 2005-05 03292006-m7en-viaq 256mbit mobile-ram mobile-ram hys25[l/s]256160a[f/c]?7.5 hyb25s256160ac hye25l256160af 1overview 1.1 features ?16 mbits 16 organisation ? fully synchronous to positive clock edge ? four internal banks for concurrent operation ? data mask (dm) for byte control with write and read data ? programmable cas latency: 2 or 3 ? programmable burst length: 1, 2, 4, 8, or full page ? programmable wrap sequence: sequential or interleaved ? random column address every clock cycle (1-n rule) ? deep power down mode ? extended mode register for mobile-ram features ? temperature compensated self refresh with on-die temperature sensor ? partial array self refresh ? power down and clock suspend mode ? automatic and controlled precharge command ? auto refresh mode (cbr) ? 8192 refresh cycles / 64 ms ? self-refresh with programmble refresh period ? programmable power reduction feature by pa rtial array activation during self-refresh ? v ddq = 1.8v or 2.5 v or 3.3 v ? v dd = 2.5 v or 3.3 v ? p-tfbga-54 package 9-by-6-ball arra y with 3 depopulated rows (12 x 8 mm 2 ) ? operating temperature range: commercial (0 c to +70 c) extended (?25 c to +85 c) 1.2 description the 256mbit mobile-ram is a new generation of low power, four bank synchronous dram organized as 4 banks x 4 mbit x 16 with additional features for mobile applications. the synchronous mobile-ram achieves high speed data transfer rates by employing a chip architec ture that prefetches multiple bits and then synchronizes the output data to a system clock. the device adds new features to the industry standards set for synchronous dram products. parts of the memory array can be selected for self-refresh and the refresh period during self-refresh is programmable in 4 steps table 1 performance 1) 1) for vddq = 2.5 v or 3.3 v; part number speed code ?7.5 unit max. clock frequency @cl3 f ck3 133 mhz min. clock period @cl3 t ck3 7.5 ns min. access time from clock @cl3 t ac3 6.0 ns min. clock period @cl2 t ck2 9.5 ns min. access time from clock @cl2 t ac2 6.0 ns
internet data sheet 7 rev. 1.40, 2005-05 03292006-m7en-viaq hys25[l/s]256160a[f/c]?7.5 256mbit mobile-ram overview which drastically reduces the self refresh current, depending on the case temperature of the components in the system application. in addition a ?d eep power down mode? is available. operating the four memory banks in an interleave fashion allows random access operation to occur at higher rate. a sequential and gapless data rate is possible depending on burst length, cas latency and speed grade of the device. the mobile-ram is housed in a fbga ?chip-size? packa ge. the mobile-ram is ava ilable in the commercial (0 c tc 70 c) and extended (?25 c to +85 c) temperature range. table 2 ordering information for non-green products product type 1) function code case temperature range package hyb25l256160ac?7.5 pc133?333?522 commercial (0 c tc 70 c) p-tfbga-54 hyb25s256160ac?7.5 pc133?333?522 commercial (0 c tc 70 c) p-tfbga-54 table 3 ordering information for green products product type 1) 1) hyb/e: designator for memory components for commercial /extended temperature range 25l: mobile-ram at v dd = 2.5 v 256: 256-mbit density 160: product variation x16 a: die revision a f/c: lead & halogen free / lead-containing ? 7.5: speed grade - see table 1 function code case temperature range package hyb25l256160af?7.5 pc133?333?522 commercial (0 c tc 70 c) p-tfbga-54 hye25l256160af?7.5 pc133?333?522 extended (?25 c to +85 c) p-tfbga-54
hys25[l/s]256160a[f/c]?7.5 256mbit mobile-ram pin configuration internet data sheet 8 rev. 1.40, 2005-05 03292006-m7en-viaq 2 pin configuration figure 1 pin configuration p-tfbga-54 (16 mb 16) < top-view > 123 789 vss dq15 vssq a vddq dq0 vdd dq14 dq13 vddq b vssq dq2 dq1 dq12 dq11 vssq c vddq dq4 dq3 dq10 dq9 vddq d vssq dq6 dq5 dq8 nc vss e vdd ldqm dq7 udqm clk cke f cas ras we a12 a11 a9 g ba0 ba1 cs a8 a7 a6 h a0 a1 a10/ap vss a5 a4 j a3 a2 vdd
internet data sheet 9 rev. 1.40, 2005-05 03292006-m7en-viaq hys25[l/s]256160a[f/c]?7.5 256mbit mobile-ram pin configuration table 4 input/output signals pin symbol type polarity function f2 clk input positive edge clock f3 cke input active high clock enable g9 cs input active low chip select f8 ras input active low command inputs f7 cas f9 we g8 ba1 input active high bank address inputs g7 ba0 g1 a12 input active high address inputs g2 a11 h9 a10/ap g3 a9 h1 a8 h2 a7 h3 a6 j2 a5 j3 a4 j7 a3 j8 a2 h8 a1 h7 a0 a2 dq15 input/ output active high data input/output b1 dq14 b2 dq13 c1 dq12 c2 dq11 d1 dq10 d2 dq9 e1 dq8 e9 dq7 d8 dq6 d9 dq5 c8 dq4 c9 dq3 b8 dq2 b9 dq1 a8 dq0 f1 udqm input active high data input/output mask e8 ldqm
hys25[l/s]256160a[f/c]?7.5 256mbit mobile-ram pin configuration internet data sheet 10 rev. 1.40, 2005-05 03292006-m7en-viaq e2 nc ? ? not connected a7, b3, c7, d3 v ddq supply ? dq power supply a3 b7 c3 d7 v ssq supply ? dq ground a9 e4 j9 v dd supply ? power supply a1 e3 j1 v ss supply ? ground table 4 input/output signals (cont?d) pin symbol type polarity function
internet data sheet 11 rev. 1.40, 2005-05 03292006-m7en-viaq hys25[l/s]256160a[f/c]?7.5 256mbit mobile-ram functional description 3 functional description 3.1 mode register definition 3.1.1 operating mode the normal operating mode is selected by issuing a mode register set command with bits a12-a7 set to zero, and bits a6-a0 set to the desired values. burst length for write bursts is fixed to one by issuing a mode register set command with bits a12-a10 and a8-a7 each set to zero , bit a9 set to one, and bits a0-a6 set to the desired values. all other combinations of values for a12-a7 are rese rved for future use and/or test modes. test modes and reserved states should not be used as unknown operation or incompatibility wit h future versio ns may result. mr mode register definition (ba[1:0] = 00 b ) ba1ba0a12a11a10a9a8a7a6a5a4a3a2a1a0 0 0 mode cl bt bl reg. addr w w w w field bits type description bl [2:0] w burst length number of sequential bits per dq related to one read/write command; note: all other bit comb inations are reserved. 000 1 001 2 010 4 011 8 111 full page (sequential burst type only) bt 3w burst type 0 sequential 1 interleaved cl [6:4] w cas latency number of full clocks from read command to first data valid window; note: all other bit comb inations are reserved. 010 2 011 3 mode [12:7] w operating mode note: all other bit comb inations are reserved. 000000 burst read/burst write 000100 burst read/single write
hys25[l/s]256160a[f/c]?7.5 256mbit mobile-ram functional description internet data sheet 12 rev. 1.40, 2005-05 03292006-m7en-viaq 3.2 extended mode register emr extended mode register definition (ba[1:0] = 10 b ) ba1ba0a12a11a10a9a8a7a6a5a4a3a2a1a0 1 0 mode tcsr pasr reg. addr w w w field bits type description 1) 1) all other bit combin ations are reserved. pasr [2:0] w partial array self refresh 000 banks to be self refreshed: all 4 of 4 001 banks to be self refreshed: 2 of 4, ba[1:0] = 00 b or 01 b 010 banks to be self refreshed: 1 of 4, ba[1:0] = 00 b 101 banks to be self refresh ed: 0.5 of 4, ba[1:0] = 00 b & ra12 = 0 b 110 banks to be self refreshed: 0.25 of 4, ba[1:0] = 00 b & ra[12:11] = 00 b tcsr [4:3] w temperature compensated self refresh 00 on-chip temperature sensor enabled 01 maximum case temperature: 45c, on-chip temperature sensor disabled 10 maximum case temperature: 15c, on-chip temperature sensor disabled 11 maximum case temperature: 85c, on-chip temperature sensor disabled mode [12:5] w operating mode 00h normal operation
internet data sheet 13 rev. 1.40, 2005-05 03292006-m7en-viaq hys25[l/s]256160a[f/c]?7.5 256mbit mobile-ram electrical characteristics 4 electrical characteristics 4.1 operating conditions attention: stresses above those listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. table 5 absolute maximum ratings parameter symbol values unit note/ test condition min. typ. max. voltage on i/o pins relative to v ss v in , v out ?1.0 ? v dd +0.5 v ? voltage on i/o pins relative to v ss v in , v out ?1.0 ? +4.6 v ? voltage on v dd supply relative to v ss v dd ?1.0 ? +4.6 v ? voltage on v ddq supply relative to v ss v ddq ?1.0 ? +4.6 v ? operating case temperature (extended) t case ?25 ? +85 c? storage temperature (plastic) t stg ?55 ? +150 c? power dissipation p d ??0.7w? short circuit output current i out ?50?ma? table 6 recommended operating conditions and dc characteristics 1) 1) 0 c t c 70 c (comm.) and ?25 c t case +85 c parameter symbol values unit note/ test condition min. max. supply voltage v dd +2.3 +3.6 v ? i/o supply voltage v ddq +1.65 +3.6 v 2) 2) v ddq < v dd + 0.3 v supply voltage v ss 00 v? i/o supply voltage v ssq 00 v? input high (logic 1) voltage v ih 0.8 x v ddq v ddq + 0.3 v 3)4) 3) all voltages referenced to v ss 4) v ih may overshoot to v ddq + 2.0 v for pulse width of < 4 ns. v il may undershoot to ? 2.0 v for pulse width < 4 ns. pulse width measured at 50% points with amplitude measured peak to dc reference input low (logic 0) voltage v il ?0.3 +0.3 v 3)4) output high (logic 1) voltage v oh v ddq ? 0.2 ? v i oh = ?0.1 ma output low (logic 0) voltage v ol ?+0.2vi oh = +0.1 ma input leakage current i il ?5 +5 a any input 0 v v in v dd ; all other pins not under test v in =0v output leakage current i oz ?5 +5 a dq is disabled; 0 v v out v ddq
hys25[l/s]256160a[f/c]?7.5 256mbit mobile-ram electrical characteristics internet data sheet 14 rev. 1.40, 2005-05 03292006-m7en-viaq 4.2 current specification table 7 input and output capacitances parameter symbol values unit note/ test condition min. typ. max. input capacitance: clk c i1 ??3.5pf 1) 1) these values are guaranteed by design and are tested on a sample base only. v ddq = v dd = 2.5 v 0.2 v, f = 1 mhz, t case =25 c, v out(dc) = v ddq /2, v out (peak to peak) 0.2 v. unused pins are tied to ground. input capacitance: all other input-only pins c i2 ??3.8pf 1) input/output capacitance: dq c io 4.0 ? 5.0 pf 1) table 8 i dd specification and conditions 1)2) 1) 0 c t c 70 c (comm.) and ?25 c t case +85 c; recommended operating conditions unless otherwise noted 2) for proper power-up see the opera tion section of this data sheet. parameter symbol ?7.5 unit note/ test condition typ. max. operating current single bank access cycles i dd1 ?65 ma t rc = t rc,min 3) 3) these parameters depend on the frequency. these values are measured at 133mhz for ?7.5 and at 100mhz for ?8 parts. input signals are changed once during t ck . if the devices are operating at a fr equency less than the maximum operation frequency, these current values are reduced. precharge standby current power down mode i dd2p ?0.6 macs = v ih,min , cke v il,max 3) precharge standby current non power down mode i dd2n ?20 macs = v ih,min , cke v ih,min 3) non operating current active state of 1 upto 4 banks, power down i dd3p ?3.5 macs = v ih,min , cke v il,max 3) non operating current active state of 1 upto 4 banks, non power down i dd3n ?25 macs = v ih,min , cke v ih,min 3) burst operating current read command cycling i dd4 ?80 ma 3)4) 4) these parameters are measured with continuous data stre am during read access and all dqs toggling. cl = 3 and bl = 4 is used and the v ddq current is excluded. auto refresh current auto refresh command cycling i dd5 ? 155 ma t rc = t rc,min self refresh current i dd6 a t ck =infinity, cke = 0.2 v deep power down mode current i dd7 ?5 a
internet data sheet 15 rev. 1.40, 2005-05 03292006-m7en-viaq hys25[l/s]256160a[f/c]?7.5 256mbit mobile-ram package outline 5 package outline figure 2 package outline p-tfbga-54 (plastic thin small ou tline package type ii) tolerance 0.1mm for length and width smd = surface mounted device you can find all of our packages, sorts of packing and others in our infineon internet page ?products?: http://www.infineon.com/products . dimensions in mm
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